 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| UNISONIC TECHNOLOGIES CO., LTD UT110N03 N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT110N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. Power MOSFET FEATURES * VDS(V)=26V * ID=110A * RDS(ON) =4.8m@VGS=10 V * RDS(ON) =7.0m@VGS=4.5 V SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT110N03L-TA3-T UT110N03G-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw 1 of 4 QW-R502-367.A Copyright (c) 2009 Unisonic Technologies Co., Ltd UT110N03 ABSOLUTE MAXIMUM RATINGS (TC =25C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 26 V Gate-Source Voltage VGSS 20 V Continuous Drain Current ID 110 A Pulsed Drain Current (Note 2) IDM 440 A Single Pulsed Avalanche Current (Note 3) IAS 35 A Single Pulsed Avalanche Energy (Note 3) EAS 875 mJ Power Dissipation PD 100 W Junction Temperature TJ +175 C Strong Temperature TSTG -55 ~ +175 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature 3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25, Starting TJ = 25C. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL JA JC MIN TYP MAX 62.5 1.5 UNIT C/W C/W ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS(Note1) Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS VGS =0V, ID =250 A VDS=26V,VGS =0 V VDS =0V, VGS =20 V VDS =VGS, ID =250 A VGS =10V, ID =50 A VGS =4.5V, ID =40 A MIN 26 1 100 1 3.9 5.2 9500 800 300 50 20.8 19 25.7 10 128 34 65 3 4.8 7.0 TYP MAX UNIT V A nA V m m pF pF pF nC nC nC ns ns ns ns V A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS Output Capacitance COSS VDS =15V, VGS =0V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS(Note 2) Total Gate Charge QG VDS =15V, VGS =5V, ID =16A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=15V, ID =1A, RGEN =6 Turn-ON Rise Time tR Turn-OFF Delay Time tD(OFF) VGS =10 V Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=20 A,VGS=0 V Drain-Source Diode Forward Current IS Notes: 1. Pulse Test: Pulse Width<300s, Duty Cycle<2% 2. Guaranteed by design, not subject to production testing. 50 20 200 70 1.5 90 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-367.A UT110N03 TEST CIRCUIT AND WAVEFORM Power MOSFET Switching Time Test Circuit Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-367.A UT110N03 TYPICAL CHARACTERISTICS 300 250 Drain Current, ID (A) Drain Current, ID (A) 200 150 100 50 0 0 5 10 15 20 25 30 35 40 45 Drain-Source Breakdown Voltage, BVDSS(V) Drain-Source On-State Resistance Characteristics Drain Current vs. Drain-Source Breakdown Voltage 300 250 200 150 100 50 0 0 Power MOSFET Drain Current vs. Gate Threshold Voltage 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Gate Threshold Voltage, VTH (V) Drain Current vs. Source to Drain Voltage 16 14 Drain Current, ID (A) 12 10 8 6 4 2 0 0 12 10 Drain Current, ID (mA) 8 6 4 2 0 VGS=10V ID=10A VGS=4.5V ID=10A 150 50 100 Drain to Source Voltage, VDS (mV) 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-367.A |
Price & Availability of UT110N03
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |